SIGC18T60NCX7SA2

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:db305d2d55da Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC18T60NCX7SA2

Overview

The SIGC18T60NCX7SA2 is a single NPT IGBT die manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and utilizes TRENCHSTOP™ technology for optimized switching performance. The component is supplied in bulk packaging as a bare wafer/die, intended for integration into custom power modules or discrete assemblies.

Feature Summary

NPT (Non-Punch-Through) silicon structure
TRENCHSTOP™ gate architecture
High thermal robustness

Applications

Industrial motor drives
Power supply inverters
Custom power module assembly

Procurement Notes

Verify the specific lot date code and wafer map compatibility with your assembly process before ordering. Confirm that the bulk die format meets your pick-and-place or wire-bonding equipment specifications. Ensure proper ESD handling protocols are followed during storage and installation to prevent damage to the sensitive gate oxide layer.

Selection Notes

Select this component when a 600V blocking capability is required in a compact form factor. Consider the trade-off between the high current density of the NPT structure and the specific thermal management requirements of your target application compared to standard planar IGBTs.

Part Context

This part belongs to Infineon's portfolio of discrete semiconductor devices designed for high-power applications. It represents a foundational building block for engineers designing custom power electronics rather than a pre-packaged commercial module.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. Cross-reference with other Infineon 600V NPT dies such as the SIGC series variants based on specific current ratings and thermal resistance requirements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.