SIGC18T60SNCX1SA2

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:34f993a3bea1 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：36ns/250ns
Test Condition：400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC18T60SNCX1SA2

Overview

The SIGC18T60SNC is a 600 V NPT technology IGBT chip with a 100 µm die size. It features a positive temperature coefficient and short circuit proof capability, facilitating easy paralleling. The collector-emitter saturation voltage is typically 1.6 V at 20 A. Switching characteristics include a turn-off delay time of 250 ns and fall time of 63 ns under specified inductive load conditions.

Feature Summary

NPT technology for reduced switching losses
Positive temperature coefficient for safe paralleling
Short circuit proof design

Applications

Motor drives
Power inverters
Industrial power supplies

Procurement Notes

Verify the specific ordering suffix (A001 or A002) to confirm if the chip is sawn on foil or unsawn. Ensure compatibility with TO220 package assembly processes. Confirm storage requirements are met to maintain device integrity before die bonding.

Selection Notes

Select this chip for applications requiring robust short circuit withstand capability and ease of parallel operation. Consider the 600 V rating and 20 A current handling for medium-power drive systems. Evaluate thermal management strategies given the 150 °C maximum junction temperature limit.

Part Context

This component is an internal IGBT chip used within Infineon's SGP20N60 discrete device. It represents a specialized semiconductor die rather than a standalone packaged product, intended for integration into larger power modules or assemblies by manufacturers.

Replacement Considerations

Direct replacement requires matching NPT technology and similar electrical parameters. Verify mechanical dimensions and metallization compatibility for existing assembly lines. Consult Infineon for updated chip generations offering improved performance metrics.