ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 20A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 20A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：15ns/65ns
- Test Condition：400V, 20A, 2.2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC18T60UN is a high-speed IGBT chip manufactured by Infineon Technologies using NPT (Non-Punch-Through) technology. It features a 600V collector-emitter voltage rating and a 20A DC collector current capability. The die size measures 4.3 x 4.3 mm² with a thickness of 100 µm. Key electrical parameters include a maximum VCE(sat) of 3.15V at 20A, a turn-off delay time of 65ns, and a fall time of 35ns under specified inductive load conditions.
Feature Summary
- Utilizes NPT technology for low turn-off energy loss
- Features positive temperature coefficient for easy paralleling
- Short circuit proof design for robust operation
Applications
- Welding equipment
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific ordering code Q67050-A4222-A101 against the required package configuration. Confirm storage requirements involving dry nitrogen and ambient temperature limits to maintain component integrity. Ensure handling procedures account for electrostatic discharge sensitivity as per MIL-STD 883 standards during assembly processes.
Selection Notes
Select this chip for applications requiring high switching speeds and reliable parallel operation due to its positive temperature coefficient. Consider the 600V rating and 20A current capacity when designing thermal management solutions. Evaluate the short-circuit proof nature for systems demanding high fault tolerance and operational safety margins.
Part Context
This component serves as the core semiconductor element within the SGP20N60HS TO220 packaged device. It represents Infineon's implementation of high-speed IGBT technology optimized for power conversion efficiency. The chip is designed to integrate into modules where compact die dimensions and high voltage blocking capabilities are critical.
Replacement Considerations
Q67050-A4222-A101
FAQ
What technology does the SIGC18T60UN utilize?
It utilizes Non-Punch-Through (NPT) technology.
Is the chip suitable for paralleling?
Yes, it features a positive temperature coefficient that facilitates easy paralleling.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage is 600V.
