SIGC25T60NCX1SA4

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:296b234f8ba2 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 30A, 8.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

SIGC25T60NCX1SA4

Overview

The SIGC25T60NCX1SA4 is a discrete IGBT chip manufactured by Infineon Technologies using NPT (Non-Punch-Through) technology. It features a collector-emitter voltage rating of 600 V and a DC collector current capacity of 30 A at 25 °C. The device has a die size of 4.5 x 5.71 mm² with a thickness of 100 µm. Key electrical parameters include a saturation voltage of 1.7 V to 2.5 V at 30 A, a threshold voltage of 4.5 V to 6.5 V, and switching times of 8 ns rise and 25 ns fall time under specified inductive load conditions.

Feature Summary

Utilizes NPT technology for positive temperature coefficient characteristics
Designed for easy paralleling in high-power applications
Features a 100 µm thick chip structure

Applications

IGBT modules
Industrial drives

Procurement Notes

Verify the specific ordering code Q67050-A4143-A001 against the datasheet to ensure correct component identification. Confirm that the X1SA4 suffix aligns with the required packaging or reel specifications. Check storage requirements, which mandate dry nitrogen environments below 23°C for up to six months. Ensure electrostatic discharge handling protocols are followed as the device is sensitive.

Selection Notes

Select this component for designs requiring robust 600 V blocking capability with moderate current handling. The NPT technology ensures stable thermal behavior, making it suitable for parallel configurations. Evaluate the 30 A continuous current rating against the thermal management capabilities of the target assembly. Consider the 100 µm thickness for compatibility with standard die bonding processes.

Part Context

This part is a bare silicon chip intended for integration into larger power modules rather than direct PCB mounting. It belongs to Infineon's portfolio of discrete IGBT chips used in module manufacturing. The component serves as the core switching element within assembled power electronics units.

Replacement Considerations

Refer to the FS 30 R06 XL4 device datasheet for related electrical characteristics. Verify mechanical dimensions and metallization systems when substituting with other 600 V NPT chips.