SIGC25T60NCX1SA5

Overview

The SIGC25T60NC is a 600 V NPT (Non-Punch-Through) technology IGBT chip designed for integration into power modules. It features a 100 µm die size with dimensions of 4.5 x 5.71 mm² and an active area of 21.4 mm². The device supports a DC collector current of 30 A and a pulsed current of 90 A at Tj=25 °C. Key electrical parameters include a saturation voltage of 1.7 V to 2.5 V at 30 A, a threshold voltage of 4.5 V to 6.5 V, and switching times of 8 ns rise and 25 ns fall time under specified inductive load conditions.

Feature Summary

• Utilizes NPT technology for positive temperature coefficient characteristics
• Facilitates easy paralleling of multiple chips within module assemblies
• Features a 100 µm thick silicon die suitable for epoxy or soft solder die bonding

Applications

• IGBT Module manufacturing
• Industrial motor drives
• Power conversion systems

Procurement Notes

Verify the specific ordering code Q67050-A4143-A001 against the required revision level. Confirm that the component meets the AQL 0.65 visual inspection standards. Ensure handling procedures account for Electrostatic Discharge sensitivity as per MIL-STD 883. Validate storage conditions, requiring dry nitrogen environments below 23°C for periods not exceeding six months to maintain integrity.

Selection Notes

Select this chip for applications requiring robust high-voltage isolation and reliable thermal performance. The NPT architecture ensures stable operation without secondary breakdown risks. Consider the 30 A continuous current rating and 600 V blocking capability when designing the thermal management system. Verify compatibility with standard wire bonding materials such as aluminum wires up to 500 µm diameter.

Part Context

This component is a discrete semiconductor chip intended for internal use within Infineon's module portfolio rather than a standalone through-hole or surface-mount device. It serves as the core switching element for higher-power assemblies like the FS 30 R06 XL4 series. The part represents a mature generation of silicon IGBT technology optimized for cost-effective mass production on 150 mm wafers.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As this is a raw chip component, direct replacements depend on specific module-level equivalence and internal sourcing agreements rather than generic cross-reference lists.