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Product Detailed Parameters
- Description：IGBT NPT 600V 30A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：44ns/324ns
- Test Condition：400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC25T60SNC is a silicon IGBT chip manufactured by Infineon Technologies using Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600 V and a continuous DC collector current capacity of 30 A at 25 °C. The device has a die size of 4.5 x 5.71 mm² with a thickness of 100 µm. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.5 V, a gate-emitter threshold voltage range of 3 V to 5 V, and a pulsed collector current capability of 90 A. The operating junction temperature range spans from -55 °C to +150 °C.
Feature Summary
- Utilizes NPT technology for positive temperature coefficient characteristics that facilitate easy paralleling.
- Engineered with short-circuit proof capabilities to enhance system robustness.
- Features a 100 µm chip thickness suitable for epoxy and soft solder die bonding.
Applications
- Motor drives
- Power inverters
Procurement Notes
Verify the specific ordering suffix against the datasheet table to confirm whether the component is supplied as sawn on foil or unsawn. Ensure storage conditions strictly follow the recommendation of dry nitrogen below 23°C within the original container for less than six months. Confirm compatibility with recommended wire bond materials such as aluminum up to 500µm during assembly.
Selection Notes
Select this chip when designing circuits requiring 600V blocking capability with a 30A nominal current rating. The NPT architecture provides inherent thermal stability, making it suitable for applications where parallel operation is necessary. Verify that the switching speed requirements align with the specified turn-off delay times under inductive load conditions.
Part Context
This component is an internal semiconductor chip utilized within larger discrete packages, specifically referenced for use in the SGP30N60 TO220 package. It serves as the core switching element rather than a standalone finished product. The datasheet details its physical dimensions and electrical limits for integration into power modules.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage is 2.5 V when tested at a gate-emitter voltage of 15 V and a collector current of 30 A.
Is the chip compatible with standard wire bonding?
Yes, the datasheet specifies that the chip is suitable for wire bonding using aluminum wires with a diameter of 500 µm or less.
How does the NPT technology affect paralleling?
The NPT technology provides a positive temperature coefficient, which facilitates easy paralleling of multiple chips by ensuring balanced current sharing as temperature increases.
