SIGC25T60UNX1SA2

Overview

The SIGC25T60UN is a high-speed IGBT chip utilizing NPT technology with a 100µm thickness. It features a collector-emitter voltage of 600V and a DC collector current of 30A, with a pulsed current rating of 90A. The saturation voltage is typically 2.8V at 30A. Switching characteristics include a turn-off delay of 122ns and a fall time of 29ns under specified inductive load conditions. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Utilizes Non-Punch-Through (NPT) technology for robust performance
• Features short-circuit proof capability for enhanced reliability
• Positive temperature coefficient facilitates easy paralleling

Applications

• Welding equipment
• Power Factor Correction (PFC)
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering code Q67041-A4667-A001 against procurement requirements. Confirm storage conditions require dry nitrogen and original containers. Ensure handling procedures account for electrostatic discharge sensitivity per MIL-STD 883 standards during assembly.

Selection Notes

Select this chip for designs requiring high-speed switching and positive temperature coefficients. Consider thermal management capabilities as the DC current depends on assembly thermal properties. Verify compatibility with TO220 package integration using SGP30N60HS datasheet references.

Part Context

This component is a bare die intended for integration into discrete modules or power assemblies. It serves as the core semiconductor element for Infineon's SGP30N60HS device. The chip is sawn on foil and designed for epoxy or soft solder die bonding applications.

Replacement Considerations

Refer to the SGP30N60HS datasheet for complete module specifications when evaluating system-level replacements. No direct equivalent bare die substitutes are documented in the provided source material.