SIGC25T60UNX1SA3

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:419a5b548e4a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：16ns/122ns
Test Condition：400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60UNX1SA3

Overview

The SIGC25T60UN is a high-speed IGBT chip utilizing NPT technology with a 100µm thickness. It features a collector-emitter voltage of 600V and a DC collector current of 30A. The device exhibits low turn-off energy, short circuit proof capability, and a positive temperature coefficient for easy paralleling. Key dynamic parameters include a turn-on delay of 16ns, rise time of 13ns, turn-off delay of 122ns, and fall time of 29ns under specified inductive load conditions.

Feature Summary

Utilizes 600V NPT technology with a 100µm chip thickness
Features low Eoff and short circuit proof capability
Positive temperature coefficient enables easy paralleling

Applications

Welding equipment
Power Factor Correction (PFC)
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific datasheet edition and revision level against the manufacturer's official records to ensure alignment with the required electrical characteristics. Confirm that the component meets all necessary safety standards and handling requirements for electrostatic sensitive devices as outlined in the technical documentation.

Selection Notes

Select this chip for applications requiring high-speed switching and robust short-circuit tolerance. Ensure the thermal management design accommodates the maximum junction temperature of 150°C. Verify compatibility with the intended package assembly, such as the TO220 configuration used in the SGP30N60HS module.

Part Context

This component is a discrete IGBT chip designed for integration into power modules. It serves as the core switching element in various industrial and consumer power electronics applications. The chip is manufactured using Infineon's specialized NPT technology to optimize performance and reliability.