SIGC25T60UNX7SA1

Description：IGBT NPT 600V 30A DIE
Series：-

SKU:e2df0a564593 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 30A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 30A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：16ns/122ns
Test Condition：400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC25T60UNX7SA1

Overview

The SIGC25T60UNX7SA1 is a TRENCHSTOP™ IGBT3 chip manufactured by Infineon Technologies. It is an N-channel insulated gate bipolar transistor designed for efficient power switching applications. The component utilizes advanced trench technology to achieve low conduction and switching losses. It is housed in a specific package suitable for high-power density designs. This device is part of the broader IGBT3 family, offering robust performance in industrial and automotive power electronics systems.

Feature Summary

Utilizes TRENCHSTOP™ IGBT3 chip technology for optimized switching characteristics
Designed as an N-channel device for efficient power conversion
Engineered for high reliability in demanding power electronic environments

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency switched-mode power supplies

Procurement Notes

Verify the exact suffix 'X7SA1' against official Infineon documentation to ensure correct RoHS compliance status and tape-and-reel packaging specifications. Confirm that the TRENCHSTOP™ IGBT3 designation matches the required electrical characteristics for your specific circuit design before procurement.

Selection Notes

Select this component when a balance of low on-state voltage and fast switching speed is required. Consider the thermal resistance and package limitations for your heat sink design. Ensure the gate drive voltage requirements align with the IGBT3 family specifications for optimal performance and longevity.

Part Context

This part belongs to Infineon's TRENCHSTOP™ IGBT3 product line, which represents a generation of insulated gate bipolar transistors known for improved efficiency over previous technologies. The SIGC25T60UNX7SA1 specifically denotes a 600V variant within this series, targeting medium-power applications where size and weight are critical factors.