SIGC25T60UNX7SA2

SIGC25T60UNX7SA2

  • Description:IGBT NPT 600V 30A DIE
  • Series:-

SKU:48c1583db065 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 30A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:3.15V @ 15V, 30A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:16ns/122ns
  • Test Condition:400V, 30A, 1.8Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC25T60UNX7SA2

Overview

The SIGC25T60UNX7SA2 is a single IGBT die utilizing NPT technology with a 600 V blocking voltage and 30 A continuous current rating. It employs the TRENCHSTOP™ IGBT3 chip architecture for optimized switching performance. The component operates within a junction temperature range of -55°C to 150°C. Electrical testing conditions specify 400V and 30A parameters. This surface-mount die is designed for high-efficiency power conversion applications requiring robust thermal management and compact form factors.

Feature Summary

  • Utilizes Infineon's TRENCHSTOP™ IGBT3 chip technology for advanced switching characteristics
  • NPT (Non-Punch-Through) structure ensures stable operation across wide temperature ranges
  • Surface mount die configuration facilitates integration into custom power modules
  • Standard input type compatible with common gate driver interfaces

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • High-frequency power converters

Procurement Notes

Verify that the specific suffix 'UNX7SA2' matches the required tape-and-reel or bulk packaging format, as Infineon often uses distinct suffixes for different handling requirements. Confirm the device is ordered as a bare die rather than a packaged module. Ensure the procurement documentation explicitly references the TRENCHSTOP™ IGBT3 generation to guarantee compatibility with existing gate drive designs. Cross-check the manufacturer part number against official Infineon databases to avoid counterfeit components.

Selection Notes

Select this component when a bare IGBT die is required for custom power electronics assembly rather than pre-packaged modules. The 600V rating suits medium-voltage industrial applications. Consider the thermal resistance characteristics inherent to bare dies when designing heat sinks. Verify that the PCB layout supports the surface-mount footprint and adequate copper area for current carrying capacity. Evaluate the need for external snubber circuits based on the specific switching speed requirements of the application.

Part Context

This part belongs to Infineon's portfolio of discrete power semiconductors, specifically the IGBT family. It represents a transition from traditional through-hole packages to surface-mount die formats, allowing manufacturers to design custom power stages. The SIGC series typically integrates multiple chips or specialized structures, though this specific SKU denotes a single IGBT die. It complements other Infineon components like gate drivers and diodes in complete power system solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Infineon replacement guides or contact technical support directly for qualified alternatives. Direct pin-compatible replacements may not exist due to the bare die nature of this component, requiring redesign of the power stage.

SIGC25T60UNX7SA2SIGC25T60UNX7SA2

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