SIGC42T60SNCX1SA1

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:0f973dfcd30b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：57ns/380ns
Test Condition：400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC42T60SNCX1SA1

Overview

The SIGC42T60SNC is a 600 V NPT technology IGBT chip designed for integration into power modules. It features a 100 µm thickness and a die size of 6.5 x 6.5 mm², with an active area of 35.6 mm². The device supports a DC collector current of 50 A and a pulsed collector current of 150 A. Static characteristics include a saturation voltage of 1.7 V to 2.5 V at 50 A and a threshold voltage of 3 V to 5 V. Dynamic switching performance includes a turn-off delay time of up to 532 ns and a fall time of up to 112 ns under specified inductive load conditions.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust operation.
Features a positive temperature coefficient to facilitate easy paralleling.
Includes passivation on the frontside using photoimide.

Applications

Industrial motor drives
Power module assembly

Procurement Notes

Verify the specific ordering suffix against the datasheet table to confirm whether the component is supplied as sawn-on-foil or unsawn. Confirm that the storage environment adheres to the recommended dry nitrogen conditions to maintain integrity. Ensure compatibility with epoxy or soft solder die bonding processes as indicated by the metallization specifications.

Selection Notes

Select this chip for applications requiring high-voltage isolation and reliable thermal management within modular designs. The NPT architecture provides inherent short-circuit ruggedness suitable for demanding industrial environments. Evaluate the thermal resistance of the final module assembly, as the rated DC collector current depends heavily on the cooling capabilities provided by the host package.

Part Context

This component is part of Infineon's discrete IGBT chip portfolio, specifically engineered for use in larger power electronic assemblies rather than standalone packages. It serves as the core switching element within IGBT modules, allowing manufacturers to customize thermal and electrical configurations for specific drive and inverter applications.

Replacement Considerations

Direct replacement requires matching the 600 V rating, 6.5 x 6.5 mm² die dimensions, and NPT technology. Verify that alternative chips support the same emitter and gate pad geometries for wire bonding compatibility.