SIGC42T60SNCX7SA1

SIGC42T60SNCX7SA1

  • Description:IGBT NPT 600V 50A DIE
  • Series:-

SKU:edbd05356afc Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 50A DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):50 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 50A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:57ns/380ns
  • Test Condition:400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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SIGC42T60SNCX7SA1

Overview

The SIGC42T60SNCX7SA1 is a Silicon Carbide (SiC) Schottky Barrier Diode manufactured by Infineon Technologies. It belongs to the thinQ!™ product family, designed for high-efficiency power conversion applications. The device features a 600V voltage rating and utilizes advanced SiC technology to minimize switching losses and conduction drops compared to traditional silicon alternatives.

Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for superior thermal performance and efficiency
  • Features ultra-fast switching characteristics with minimal reverse recovery charge
  • Designed for high-temperature operation suitable for demanding power electronics environments

Applications

  • High-frequency DC/DC converters
  • Power factor correction (PFC) circuits
  • Solar inverters and renewable energy systems

Procurement Notes

Verify the specific suffix 'CX7SA1' against official Infineon documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure compatibility with automated pick-and-place equipment if surface-mount assembly is planned. Cross-reference the exact part number with the latest datasheet revision to confirm material content and compliance status.

Selection Notes

Select this component when system design requires low reverse recovery charge to reduce switching losses in hard-switching topologies. Consider its thermal resistance characteristics for heatsinking requirements in high-power density designs. Evaluate the forward voltage drop at operating current to ensure it meets overall system efficiency targets compared to standard silicon diodes.

Part Context

This component is part of Infineon's thinQ!™ SiC Schottky Barrier Diode portfolio, which focuses on miniaturization and efficiency. These devices are engineered to replace bulky silicon counterparts in modern power supplies, enabling smaller passive components and higher switching frequencies in compact form factors.

Replacement Considerations

Direct replacements must match the 600V rating and SMD package footprint. Verify that substitute SiC Schottky diodes offer comparable reverse recovery charge (Qrr) and forward voltage characteristics to maintain circuit efficiency and thermal performance.

SIGC42T60SNCX7SA1SIGC42T60SNCX7SA1

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