SIGC42T60UNX1SA1

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:7cfd3a79089f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：48ns/350ns
Test Condition：400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC42T60UNX1SA1

Overview

The SIGC42T60UN is a high-speed IGBT chip utilizing NPT technology with a 600V collector-emitter voltage rating. It features a 100µm die size and supports a DC collector current of 50A and a pulsed current of 150A. The device exhibits low turn-off energy, a positive temperature coefficient for easy paralleling, and short-circuit proof capability. Static characteristics include a saturation voltage of 3.15V at 50A and a threshold voltage range of 3V to 5V. Dynamic parameters specify a fall time of 20ns and an input capacitance of 2572pF under standard test conditions.

Feature Summary

Utilizes 600V NPT technology with a 100µm chip thickness
Features low Eoff and positive temperature coefficient for easy paralleling
Short-circuit proof design

Applications

Welding equipment
Power Factor Correction (PFC)
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering code SP0001-01820 against the datasheet to ensure correct part identification. Confirm that the intended application does not involve life-support systems without express written approval from Infineon Technologies. Ensure storage conditions remain within the recommended environment of dry nitrogen and below 23°C to maintain component integrity prior to assembly.

Selection Notes

Select this chip when designing circuits requiring high-speed switching capabilities in NPT technology. Consider its 50A continuous current rating and 600V blocking voltage for robust power handling. Evaluate the positive temperature coefficient for applications necessitating parallel operation. Verify thermal management requirements align with the specified operating junction temperature range of -55°C to +150°C.

Part Context

This component serves as the core semiconductor die for the SGW50N60HS module housed in a TO247 package. It represents Infineon's high-speed IGBT offerings from the mid-2000s, emphasizing efficiency through low switching losses. The chip is designed for industrial power conversion applications where reliability and thermal stability are critical performance factors.