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Product Detailed Parameters
- Description：IGBT NPT 600V 50A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 50A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：48ns/350ns
- Test Condition：400V, 50A, 6.8Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC42T60UNX7SA2 is a single IGBT from Infineon Technologies, designed for high-voltage power switching applications. It features a 600 V collector-emitter voltage rating and integrates an anti-parallel diode within the package. The component utilizes Infineon's TRENCHSTOP™ technology to optimize switching performance and conduction losses. Packaged in a wafer-style configuration suitable for advanced thermal management, it supports continuous collector currents up to 42 A. This device is engineered for robust operation in demanding industrial environments.
Feature Summary
- Integrates an anti-parallel diode with the IGBT chip for simplified circuit design
- Utilizes TRENCHSTOP™ technology for optimized switching characteristics
- Features a specialized wafer-style package for enhanced thermal dissipation
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific datasheet revision and technical parameters directly from Infineon's official documentation before integration. Confirm that the wafer-style packaging aligns with your board assembly capabilities and thermal requirements. Ensure compliance with RoHS standards as indicated in the product specifications.
Selection Notes
Select this component when a 600 V rating and integrated freewheeling diode are required. Consider the thermal resistance of the wafer package for your heat sink design. Evaluate the switching frequency limits against your application's operational demands to ensure optimal efficiency.
Part Context
This part belongs to Infineon's portfolio of discrete IGBTs, specifically leveraging TRENCHSTOP™ technology. It represents a solution for medium-power applications requiring reliable high-voltage switching. The wafer-style packaging distinguishes it from standard leaded packages, offering different thermal and mechanical integration options.
Replacement Considerations
Consult Infineon's official replacement guides for direct equivalents. Verify pinout compatibility and thermal characteristics if substituting with other 600 V IGBTs. Cross-reference datasheets to ensure matching electrical ratings and package dimensions.
