SIGC57T120R3LEX1SA3

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-

SKU:61b65436feca Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STOP 1200V DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC57T120R3LEX1SA3

Overview

The SIGC57T120R3LEX1SA3 is a single Insulated Gate Bipolar Transistor (IGBT) die manufactured by Infineon Technologies. It features a 1200V collector-emitter voltage rating and a continuous collector current of 50A. The component utilizes IGBT3 chip technology, offering switching energies of 4.1mJ (turn-on) and 2.8mJ (turn-off) under test conditions of 400V, 120A, 3Ohm, and 15V. Turn-on and turn-off delays at 25°C are 33ns and 310ns respectively. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Utilizes Infineon's IGBT3 chip technology for optimized performance.
Features a positive temperature coefficient for reliable parallel operation.
Designed as a bare die for integration into power modules.

Applications

Industrial motor drives
Power supply units
Inverter systems

Procurement Notes

Verify the specific suffix 'X1SA3' against official Infineon documentation to confirm exact manufacturing lot details and compliance status. Ensure that the procurement channel provides valid traceability for this semiconductor die. Confirm that the handling procedures meet the requirements for bare die components to prevent physical damage during installation.

Selection Notes

Select this component when a 1200V, 50A IGBT die with IGBT3 technology is required for high-power applications. Consider the specific switching energy values and delay times for circuit design compatibility. Evaluate the thermal management requirements given the operating temperature range and the bare die form factor for module integration.

Part Context

This part belongs to Infineon's portfolio of single IGBTs based on the IGBT3 generation. It is designed for use in power electronics where high voltage and current handling are critical. The bare die format allows manufacturers to integrate the transistor directly into custom or standard power modules, providing flexibility in packaging and thermal solution design.

Replacement Considerations

Consult official Infineon cross-reference guides for direct substitutes. Verify electrical parameters such as Vces, Ic, and switching speeds match the original specifications before considering alternative parts from other manufacturers.