SIGC61T60NCX1SA3

Description：IGBT NPT 600V 75A DIE
Series：-

SKU:6406d19c8006 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 75A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：225 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 75A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：65ns/170ns
Test Condition：300V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

Download product information

SIGC61T60NCX1SA3

Overview

The SIGC61T60NC is a standalone NPT-technology IGBT chip designed for integration into power modules. It features a 600V collector-emitter voltage rating and supports a maximum DC collector current of 75A, with a pulsed current capability of 225A. The device utilizes a 100µm thick die with dimensions of 6.99 x 8.79 mm². Key electrical characteristics include a saturation voltage of up to 2.5V at 75A and a gate-emitter threshold voltage ranging from 4.5V to 6.5V. Switching performance under inductive load conditions (300V, 75A) includes turn-on delay of 65ns and turn-off delay of 170ns.

Feature Summary

Utilizes Non-Punch-Through (NPT) technology for robust voltage blocking capabilities.
Features a positive temperature coefficient to facilitate easy paralleling of multiple chips.
Designed with short-circuit proof characteristics for enhanced system reliability.
Includes passivation on the front side using photoimide for surface protection.

Applications

Integration into industrial IGBT power modules
Motor drive systems
High-power switching applications

Procurement Notes

Verify the specific ordering code Q67050-A4160-A001 against procurement requirements. Confirm that the component is handled as an Electrostatic Discharge Sensitive Device per MIL-STD 883 standards. Ensure storage conditions adhere to the recommendation of dry nitrogen environments below 23°C to maintain material integrity prior to assembly.

Selection Notes

Select this chip when designing modular IGBT assemblies requiring 600V ratings and 75A continuous current handling. The NPT architecture is suitable for applications demanding predictable thermal behavior and parallel operation. Verify that the 100µm thickness and sawn-on-foil packaging align with the intended die-bonding process, whether using epoxy or soft solder methods.

Part Context

This component belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for internal use within larger power electronic assemblies rather than direct PCB mounting. It serves as the fundamental switching element for constructing custom or standardized module configurations, such as the BSM 75 GD 60 DLC Econo Pack2 referenced in its test documentation.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As a specialized raw silicon die, replacement requires matching the exact NPT technology, die dimensions, and electrical thresholds to ensure compatibility with existing module designs.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Is this component suitable for life-support systems?

No, Infineon Technologies components may only be used in life-support devices or systems with express written approval due to safety risks associated with failure.