SIGC81T60NCX1SA3

Description：IGBT NPT 600V 100A DIE
Series：-

SKU:5d1d66435145 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 100A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：95ns/200ns
Test Condition：300V, 100A, 2.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC81T60NCX1SA3

Overview

The Infineon SIGC81T60NCX1SA3 is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology, designed for integration into power modules. It features a 600V collector-emitter voltage rating and a die size of 8.99 x 8.99 mm² with a thickness of 100 µm. The component supports a DC collector current of 100A and a pulsed current of 300A. Operating junction temperatures range from -55°C to +150°C. Key electrical characteristics include a saturation voltage of 2.1V at 100A and a gate-emitter threshold voltage of 5.5V.

Feature Summary

Positive temperature coefficient facilitates easy paralleling of multiple chips
Short-circuit proof capability ensures robust operation under fault conditions
NPT technology provides stable switching performance across operating ranges

Applications

Industrial motor drives
Power module assembly
High-current inverter circuits

Procurement Notes

Verify the specific ordering code Q67041-A4694-A001 against the datasheet to confirm the exact configuration. Ensure storage conditions remain within the specified dry nitrogen environment to maintain component integrity. Confirm that the application design accounts for the maximum junction temperature limits during thermal management planning.

Selection Notes

Select this component for applications requiring high reliability and short-circuit withstand capability. The NPT technology offers advantages in parallel operation due to its positive temperature coefficient. Consider the 100µm thickness and die dimensions when designing the substrate and bonding interfaces for optimal thermal dissipation and mechanical stability.

Part Context

This part belongs to Infineon's discrete IGBT chip portfolio, specifically engineered for module manufacturers. It serves as a fundamental building block for constructing high-power semiconductor assemblies used in industrial automation and energy conversion systems.

Replacement Considerations

Direct replacements must match the 600V rating, 100A current capacity, and identical die dimensions. Verify compatibility with existing module packaging and wire bonding processes before substitution.