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Product Detailed Parameters
- Description：IGBT NPT 600V 100A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：95ns/200ns
- Test Condition：300V, 100A, 2.2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC81T60NCX7SA1 is a silicon IGBT module from Infineon Technologies, designed for high-power switching applications. It features a 3-chip configuration housed in a wafer-style package. The device supports a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current of 100 A. Constructed with Non-Punch-Through (NPT) technology, it offers robust performance for industrial power conversion systems requiring reliable high-current handling capabilities.
Feature Summary
- Utilizes Non-Punch-Through (NPT) IGBT technology for stable switching characteristics
- Integrates three chips within a single wafer-style module structure
- Engineered for high-voltage operation up to 600 V
- Supports high continuous current loads up to 100 A
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment inverters
Procurement Notes
Verify the part status carefully as this component is listed as obsolete in multiple distributor records. Confirm availability through authorized channels or approved secondary markets. Ensure the received units match the exact suffix SA1 and are free from physical damage. Cross-reference datasheet revisions to guarantee compatibility with existing circuit designs before final procurement decisions.
Selection Notes
Select this module when a 600 V rating and 100 A current capacity are required in a compact wafer form factor. Consider the NPT technology benefits for thermal stability in demanding environments. Evaluate the 3-chip architecture against system space constraints and heat dissipation requirements. Compare against newer generations if long-term supply chain security is a primary concern due to its obsolete status.
Part Context
This component belongs to Infineon's discrete IGBT portfolio, specifically targeting medium-power industrial applications. It represents a legacy solution utilizing established NPT technology. While superseded by newer modules in terms of availability, it remains a reference design for specific 600 V/100 A wafer-based implementations in older industrial equipment architectures.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers should consult official replacement guides for updated series or evaluate equivalent specifications from other manufacturers.
