Single FETs, MOSFETs SIHA15N50E-E3 product image

SIHA15N50E-E3

$2.49
  • Description:MOSFET N-CH 500V 14.5A TO220
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:9fca6f0c9fa2 Category: Brand:

  
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SIHA15N50E-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 14.5A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHA15N50E-E3

  • Description:MOSFET N-CH 500V 14.5A TO220
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:280mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1162 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):33W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220 Full Pack
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for SIHA15N50E-E3

SIHA15N50E-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHA15N50E-E3 is a single N-channel power MOSFET from the E Series, housed in a Thin-Lead TO-220 FULLPAK package. It features a drain-source voltage of 500 V and a continuous drain current of 14.5 A at 25 °C case temperature. The maximum on-state resistance is 0.280 Ω at VGS = 10 V and ID = 7.5 A. Total gate charge reaches 66 nC max. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 33 W.

Single FETs, MOSFETs Feature Summary

  • Low figure-of-merit combining Ron and Qg for reduced switching and conduction losses
  • Avalanche energy rated (UIS) capability for robustness in hard-switched topologies
  • Low input capacitance and low gate charge characteristics

Single FETs, MOSFETs Applications

  • PC silver box / ATX power supplies
  • Two stage LED lighting
  • Power factor correction (PFC)
  • Flyback converter
  • Switch mode power supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify compliance requirements by consulting the official Vishay documentation regarding RoHS and REACH-SVHC status. Confirm that the specific ordering suffix matches the required lead-free or halogen-free material categorization. Ensure thermal management designs account for the specified linear derating factor and maximum junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling with moderate current capacity. The TO-220 FULLPAK package facilitates through-hole mounting. Evaluate the total gate charge and on-resistance against switching frequency requirements to optimize efficiency. Verify that the unclamped inductive switching rating meets the circuit's transient energy demands.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup. It shares the same physical package and general electrical architecture as other variants in the series, such as the SIHA25N50E-E3, but differs in specific current and resistance ratings. The series is designed for general-purpose power switching applications.

Single FETs, MOSFETs Replacement Considerations

SIHA15N50E-GE3

Single FETs, MOSFETs FAQ

Is the SIHA15N50E-E3 rated for avalanche energy?

Yes, the datasheet specifies that the device is avalanche energy rated (UIS).

What is the maximum power dissipation at 25 °C case temperature?

The maximum power dissipation is 33 W.

SIHA15N50E-E3SIHA15N50E-E3
$2.49
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