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SIHA15N50E-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 14.5A TO220. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SIHA15N50E-E3 is a single N-channel power MOSFET from the E Series, housed in a Thin-Lead TO-220 FULLPAK package. It features a drain-source voltage of 500 V and a continuous drain current of 14.5 A at 25 °C case temperature. The maximum on-state resistance is 0.280 Ω at VGS = 10 V and ID = 7.5 A. Total gate charge reaches 66 nC max. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 33 W.
Verify compliance requirements by consulting the official Vishay documentation regarding RoHS and REACH-SVHC status. Confirm that the specific ordering suffix matches the required lead-free or halogen-free material categorization. Ensure thermal management designs account for the specified linear derating factor and maximum junction-to-case thermal resistance values provided in the datasheet.
Select this component for applications requiring high-voltage handling with moderate current capacity. The TO-220 FULLPAK package facilitates through-hole mounting. Evaluate the total gate charge and on-resistance against switching frequency requirements to optimize efficiency. Verify that the unclamped inductive switching rating meets the circuit's transient energy demands.
This part belongs to the Vishay Siliconix E Series Power MOSFET lineup. It shares the same physical package and general electrical architecture as other variants in the series, such as the SIHA25N50E-E3, but differs in specific current and resistance ratings. The series is designed for general-purpose power switching applications.
SIHA15N50E-GE3
Yes, the datasheet specifies that the device is avalanche energy rated (UIS).
The maximum power dissipation is 33 W.
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