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SIHA22N60AE-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 600V. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIHA22N60AE-GE3
- Description：N-CHANNEL 600V
- Series：E
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：96 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1451 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220 Full Pack
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for SIHA22N60AE-GE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SiHA22N60AE-GE3 is an N-channel enhancement mode power MOSFET from the E Series, housed in a Thin-Lead TO-220 FULLPAK package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 8 A at 150 °C junction temperature. The device exhibits a typical on-state resistance of 0.156 Ω at 25 °C with a gate-source voltage of 10 V. Total gate charge reaches a maximum of 96 nC at 480 V. Maximum power dissipation is rated at 33 W.
Single FETs, MOSFETs Feature Summary
- Low figure-of-merit (FOM) Ron x Qg
- Ultra low gate charge (Qg)
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
Single FETs, MOSFETs Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- High-intensity discharge lighting
Single FETs, MOSFETs Procurement Notes
Verify the complete ordering code to ensure compliance requirements are met. The suffix -GE3 indicates lead-free and halogen-free construction. Confirm that the specific application environment aligns with the absolute maximum ratings provided in the datasheet before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage handling with optimized switching performance. The thin-lead package design facilitates efficient thermal management while maintaining electrical isolation. Evaluate the total gate charge against driver capabilities to ensure adequate switching speeds without excessive drive current demands.
Single FETs, MOSFETs Part Context
This part belongs to Vishay's E Series Power MOSFET lineup, designed for general-purpose power switching applications. The series emphasizes efficiency through reduced parasitic capacitances and optimized on-resistance characteristics suitable for modern power conversion topologies.
Single FETs, MOSFETs Replacement Considerations
SiHG22N60AE-GE3
Single FETs, MOSFETs FAQ
What is the maximum repetitive avalanche energy rating?
The single pulse avalanche energy (EAS) is rated at 204 mJ under specified test conditions.
How does the on-state resistance vary with temperature?
The normalized on-resistance increases as the junction temperature rises, following the typical output characteristics curve provided in the datasheet.
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