SIHB5N80AE-GE3

$1.64

Description：E SERIES POWER MOSFET D2PAK (TO-
Series：E
Mfr：Vishay Siliconix
Package：Tube

SKU:a1344d0c09cb Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHB5N80AE-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is E SERIES POWER MOSFET D2PAK (TO-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHB5N80AE-GE3

Description：E SERIES POWER MOSFET D2PAK (TO-
Series：E
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：321 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SIHB5N80AE-GE3

SIHB5N80AE-GE3

Single FETs, MOSFETs Overview

The SiHB5N80AE-GE3 is an N-channel Power MOSFET from the Vishay Siliconix E Series, housed in a D2PAK (TO-263) package. It features a drain-source voltage of 800 V and a continuous drain current of 4.4 A at 25 °C case temperature. The typical on-state resistance is 1.17 Ω at VGS = 10 V. Key electrical parameters include a maximum gate charge of 16.5 nC, a threshold voltage range of 2 to 4 V, and a maximum power dissipation of 62.5 W. The device supports an operating junction temperature up to +150 °C.

Single FETs, MOSFETs Feature Summary

Features ultra-low gate charge and low figure-of-merit for reduced switching and conduction losses
Includes integrated Zener diode for electrostatic discharge protection
Rated for unclamped inductive switching avalanche energy

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies
Power factor correction circuits
High-intensity discharge lighting
Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the lead-free and halogen-free designation. Ensure the physical package dimensions align with the TO-263AB outline requirements before integration into the printed circuit board layout.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring moderate current handling capabilities. The specific on-resistance value dictates thermal management requirements under load conditions. Evaluate the gate charge specifications against the driving circuit's capability to ensure efficient switching performance within the desired frequency range.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series of Power MOSFETs designed for high-voltage efficiency. It utilizes silicon technology optimized for low effective capacitance. The series targets demanding power conversion environments where minimizing energy loss during transitions is critical for overall system efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains the 800 V rating and compatible pinout configuration. Verify that thermal resistance characteristics match the original design constraints.