SIHD6N65ET1-GE3

$0.60

Description：MOSFET N-CH 650V 7A TO252AA
Series：E
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:893c385e6206 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHD6N65ET1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 650V 7A TO252AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHD6N65ET1-GE3

Description：MOSFET N-CH 650V 7A TO252AA
Series：E
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：820 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SIHD6N65ET1-GE3

SIHD6N65ET1-GE3

Single FETs, MOSFETs Overview

The SiHD6N65ET1-GE3 is a Vishay Siliconix N-channel Power MOSFET from the E Series, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage rating of 650 V and a continuous drain current of 7 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.6 Ω at VGS = 10 V and a total gate charge of up to 48 nC. Thermal performance includes a junction-to-case thermal resistance of 1.6 °C/W and a maximum power dissipation of 78 W. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low figure-of-merit combining Ron and Qg for reduced switching and conduction losses
Ultra-low gate charge capability
Rated for unclamped inductive switching (UIS) avalanche energy
Low input capacitance

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
High-intensity discharge lighting
Industrial welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact reel quantity and packaging configuration. Confirm RoHS compliance status and material categorization details directly with the manufacturer or authorized distributors before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low gate drive requirements and efficient thermal management in compact surface-mount designs. Evaluate the trade-off between the 0.6 Ω on-resistance and the 48 nC gate charge based on the specific switching frequency and efficiency targets of the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series of planar cell technology N-channel MOSFETs. These devices are engineered to minimize power loss through optimized cell architecture. The SiHD6N65E variant specifically utilizes the DPAK (TO-252) footprint, providing a balance between thermal dissipation capabilities and space-saving surface-mount integration.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinout compatibility and absolute maximum ratings when substituting. Verify that alternative components meet the same 650 V breakdown voltage and DPAK package dimensions to ensure mechanical fit without redesigning the PCB layout.