SIHFB20N50K-E3

$2.34

Description：MOSFET N-CH 500V 20A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:f21f0267dc29 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SIHFB20N50K-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 20A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHFB20N50K-E3

Description：MOSFET N-CH 500V 20A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：250mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2870 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：280W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SIHFB20N50K-E3

SIHFB20N50K-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiHFB20N50K-E3 is a lead-free N-Channel Power MOSFET housed in a TO-220AB package. It features a drain-source voltage of 500 V and a continuous drain current of 20 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.25 Ω at VGS = 10 V. Total gate charge is specified at a maximum of 110 nC, with gate-source and gate-drain charges of 33 nC and 54 nC respectively. Maximum power dissipation reaches 280 W at 25 °C, supported by a junction-to-case thermal resistance of 0.45 °C/W.

Single FETs, MOSFETs Feature Summary

Low gate charge for simplified drive requirements
Enhanced ruggedness regarding gate, avalanche, and dynamic dV/dt performance
Fully characterized capacitance and avalanche voltage/current parameters

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance status. The -E3 designation indicates lead-free terminations compliant with RoHS standards. Confirm that the TO-220AB package matches the required mounting constraints. Ensure the component meets environmental specifications for the intended operational environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and 20 A continuous current capability are required. The low gate charge facilitates efficient driver design. Evaluate the thermal management strategy against the 0.45 °C/W junction-to-case resistance. Verify that the application operates within the specified single pulse avalanche energy limits.

Single FETs, MOSFETs Part Context

This part belongs to the IRFB/SiHFB series of Vishay Siliconix Power MOSFETs. It utilizes silicon technology optimized for high-voltage switching applications. The TO-220AB package provides robust mechanical stability for through-hole mounting. The product line emphasizes improved dynamic performance and ruggedness compared to standard counterparts.