SIHG065N60E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHG065N60E-GE3 is a single N-channel power MOSFET utilizing fourth-generation E series technology. It features a 650 V drain-source voltage rating and a maximum gate-source voltage of ±30 V. The device offers a typical on-resistance of 0.057 Ω at 25 °C with a maximum of 0.065 Ω, supporting a continuous drain current of 40 A at 25 °C case temperature. Total gate charge is rated at a maximum of 74 nC. It operates within a junction temperature range of -55 °C to +150 °C and provides an avalanche energy rating of 226 mJ.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series silicon technology designed for low figure-of-merit performance
• Rated for unclamped inductive switching (UIS) avalanche energy applications
• Optimized effective capacitance to reduce switching and conduction losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• High-intensity discharge lighting systems
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status prior to procurement. Confirm that the TO-247AC package dimensions align with the target PCB footprint requirements. Ensure thermal management solutions accommodate the specified linear derating factor and maximum power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and low conduction losses are required in through-hole designs. The TO-247AC package facilitates robust heat sinking for high-current applications. Evaluate the total gate charge against driver capabilities to ensure efficient switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET family, which emphasizes optimized trade-offs between on-resistance and gate charge. The SIHG variant specifically denotes the TO-247AC through-hole packaging format, distinguishing it from surface-mount or smaller leaded alternatives within the same electrical specification group.

Single FETs, MOSFETs Replacement Considerations

Direct functional substitutes include SIHB065N60E-GE3 (D2PAK package) and SIHW30N60E-GE3 (D2PAK package). Verify pinout compatibility and thermal resistance differences when replacing with packages other than TO-247AC.