SIHG125N65E-GE3

Single FETs, MOSFETs Overview

The SiHG125N65E-GE3 is a Vishay Siliconix E Series N-channel Power MOSFET utilizing fourth-generation technology. It features a TO-247AC package with a drain-source voltage (VDS) of 650 V and a typical on-resistance (RDS(on)) of 0.106 Ω at 25 °C and VGS = 10 V. The device supports a continuous drain current of 27 A at TJ = 150 °C, with a maximum gate charge (Qg) of 57 nC. It includes avalanche energy rating (UIS), a Kelvin connection for reduced gate noise, and low effective capacitance to minimize switching losses.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology providing low figure-of-merit Ron x Qg
• Kelvin connection designed to reduce gate noise during operation
• Avalanche energy rated (UIS) capability for robust performance
• Low effective capacitance (Co(er)) reducing switching and conduction losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting
• Industrial motor drives and induction heating

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as documented in the datasheet. Confirm the package variant matches the required TO-247AC footprint dimensions. Ensure thermal management design accounts for the specified junction-to-case resistance. Validate that application requirements align with the absolute maximum ratings provided in the official Vishay documentation.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and low conduction losses are critical. The Kelvin source pin requires careful PCB layout to isolate gate drive return paths from high-current source paths. Consider the total gate charge and effective output capacitance for driving circuit complexity. Verify that the operating temperature range fits within the -55 °C to +150 °C specification limits.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series, which focuses on optimizing the trade-off between conduction and switching losses. The TO-247AC package provides a standardized through-hole mounting solution suitable for high-power industrial and commercial applications requiring robust thermal dissipation capabilities.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other Vishay E Series devices with similar RDS(on) and VDS ratings in the TO-247AC package, such as SIHG125N65E variants. Cross-brand replacements require matching VDS, ID, RDS(on), and package pinout compatibility.