SIHP080N60E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHP080N60E-GE3 is a single N-channel enhancement mode power MOSFET from the E Series, utilizing fourth-generation technology. It features a TO-220AB package with a drain-source voltage rating of 600 V and a continuous drain current of 35 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 70 mΩ at VGS = 10 V and a maximum total gate charge of 63 nC. It supports an operating junction temperature range from -55 °C to +150 °C and includes avalanche energy ratings for robust operation.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology designed for low figure-of-merit Ron x Qg
• Reduced switching and conduction losses through low effective capacitance
• Rated for unclamped inductive switching (UIS) avalanche energy

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial motor drives and battery chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Ensure the TO-220AB package dimensions match the target PCB footprint requirements. Confirm that the thermal management design accommodates the specified linear derating factor and maximum power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and low switching losses are required in a through-hole package. The 600 V rating suits general-purpose industrial applications. Evaluate the 70 mΩ on-resistance against thermal constraints to ensure efficient conduction. Consider the 63 nC gate charge for driver capability requirements in high-frequency switching topologies.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup, characterized by optimized performance metrics for power conversion. The SIHP080N60E variant specifically targets applications requiring a balance between low on-resistance and fast switching speeds within the standard TO-220AB form factor.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Vishay E Series parts like SIHF080N60E or SIHG80N60E if package changes are acceptable. Verify pinout compatibility and thermal resistance values when substituting with similar 600 V N-channel MOSFETs from other manufacturers.