SIHP6N80E-BE3

$2.57

Description：N-CHANNEL 800V
Series：E
Mfr：Vishay Siliconix
Package：Tube

SKU:30c20332c3f4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHP6N80E-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 800V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHP6N80E-BE3

Description：N-CHANNEL 800V
Series：E
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：827 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SIHP6N80E-BE3

SIHP6N80E-BE3

Single FETs, MOSFETs Overview

The SiHP6N80E-BE3 is a Vishay Siliconix N-Channel Power MOSFET in a TO-220AB package. It features an 800 V drain-source voltage and a maximum continuous drain current of 5.4 A at 25 °C case temperature. The device has a typical on-state resistance of 0.82 Ω at VGS = 10 V and ID = 3 A. Total gate charge is rated at a maximum of 44 nC, with a threshold voltage ranging from 2.0 V to 4.0 V. Maximum power dissipation is 78 W, and the operating junction temperature range spans from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Avalanche energy rated for unclamped inductive switching (UIS) applications
Optimized figure-of-merit combining low on-resistance and ultra-low gate charge
Reduced switching and conduction losses through low input capacitance

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
High-intensity discharge (HID) lighting
Industrial welding and induction heating

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix BE3 against official documentation to confirm manufacturing location differences compared to standard variants. Ensure component authenticity by checking datasheet revision numbers and manufacturer markings. Confirm RoHS compliance status directly from the supplier's declaration before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching circuits requiring robust avalanche capability. Evaluate thermal management requirements based on the 78 W dissipation rating and linear derating factor. Verify that the gate drive voltage meets the minimum threshold for optimal on-state resistance performance under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup. It utilizes silicon technology and is housed in a lead-free, halogen-free TO-220AB package. The product line emphasizes efficiency improvements through reduced parasitic capacitances and optimized switching characteristics for industrial power electronics.