SIHU6N80E-GE3

$0.80

Description：MOSFET N-CH 800V 5.4A IPAK
Series：E
Mfr：Vishay Siliconix
Package：Tube

SKU:57febd89fd82 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHU6N80E-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 800V 5.4A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHU6N80E-GE3

Description：MOSFET N-CH 800V 5.4A IPAK
Series：E
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：827 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK (TO-251)
Package / Case：TO-251-3 Long Leads, IPAK, TO-251AB

Single FETs, MOSFETs datasheet and documents for SIHU6N80E-GE3

SIHU6N80E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHU6N80E-GE3 is a single N-channel power MOSFET from the E Series, housed in an IPAK (TO-251) package. It features an 800 V drain-source voltage rating and a continuous drain current of 5.4 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.82 Ω at VGS = 10 V and ID = 3 A. Key dynamic parameters include a maximum total gate charge of 44 nC and a forward transconductance of 2.5 S. It supports a maximum power dissipation of 78 W and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Avalanche energy rated for unclamped inductive switching (UIS) applications
Optimized figure-of-merit combining low on-resistance and ultra-low gate charge
Designed to minimize both switching and conduction losses
Low input capacitance supporting high-frequency operation

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction (PFC) circuits
High-intensity discharge (HID) lighting systems
Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free configuration. Ensure the physical package corresponds to the IPAK (TO-251) outline dimensions provided in the datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability is required alongside moderate current handling. The TO-251 package offers a balance between thermal performance and board space efficiency compared to larger through-hole packages. Evaluate the specific gate charge requirements against the driving circuit capabilities to ensure efficient switching transitions within the target application constraints.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix E Series Power MOSFETs, which are engineered for high-efficiency power conversion. The series utilizes advanced silicon technology to achieve superior figures-of-merit. The SIHU6N80E-GE3 specifically targets applications demanding robust high-voltage performance in compact surface-mount form factors.