SIJA54ADP-T1-GE3

$1.85

Description：N-CHANNEL 40 V (D-S) MOSFET POWE
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c73485d1f17d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIJA54ADP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 40 V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIJA54ADP-T1-GE3

Description：N-CHANNEL 40 V (D-S) MOSFET POWE
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：35.4A (Ta), 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：3850 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：5.2W (Ta), 65.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIJA54ADP-T1-GE3

SIJA54ADP-T1-GE3

Single FETs, MOSFETs Overview

The SiJA54ADP is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and operates in a single-channel configuration within the PowerPAK SO-8L package. The device supports a continuous drain current of up to 126 A at a case temperature of 25 °C, with a maximum on-state resistance of 2.3 mΩ at VGS = 10 V. Key electrical parameters include a typical total gate charge of 21.5 nC and a forward transconductance of 98 S.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Flexible leads for mechanical stress resilience
Optimized Qgd/Qgs ratio for switching characteristics

Single FETs, MOSFETs Applications

Synchronous rectification
High power density DC/DC converters
DC/AC inverters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure the package type aligns with the designated PowerPAK SO-8L form factor before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on the junction-to-case thermal resistance. Consider the gate charge specifications when designing drive circuits for high-frequency applications. Verify that the operating voltage and current limits remain within the absolute maximum ratings under all expected load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix family of N-Channel MOSFETs designed for power management applications. It utilizes advanced trench technology to achieve low on-resistance and efficient switching performance. The device is engineered for surface-mount assembly in compact electronic designs requiring robust power handling capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume compatibility with other manufacturers' components without validating pin configurations and electrical parameters.