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Product Detailed Parameters
- Description：MOSFET 20V 5A/4A SOT23-6L
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5A, 4A
- Rds On (Max) @ Id, Vgs：38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V, 12nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds：800pF @ 8V, 405pF @ 10V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6L
- Grade：-
- Qualification：-
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Overview
The SIL2308-TP-HF is a dual MOSFET array manufactured by Micro Commercial Components (MCC). It integrates one N-channel and one P-channel enhancement-mode field-effect transistor within a single SOT-23-6L surface-mount package. The device supports a drain-source voltage of 20V, with continuous drain currents rated at 5A for the N-channel and 4A for the P-channel configuration. Key electrical characteristics include a maximum gate threshold voltage of 1V at 250µA and a maximum gate charge of 11nC at 4.5V or 12nC at 2.5V. Input capacitance is specified at 800pF and 405pF under 8V and 10V conditions respectively. The component operates across a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a compact dual configuration
- Utilizes silicon technology for enhanced-mode operation
- Designed for surface-mount assembly in small outline packages
Applications
- Low-voltage power management circuits
- Battery protection systems
- Load switching applications
Procurement Notes
Verify the specific suffix against official MCC documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with standard SOT-23-6L footprints during PCB layout. Confirm RoHS compliance status through current datasheets before integration into regulated products.
Selection Notes
Select this component when space-constrained designs require paired N/P channel switching capabilities. Evaluate the 20V rating against system voltage peaks. Consider the low gate charge specifications for high-frequency switching efficiency requirements in portable electronics.
Part Context
This part belongs to the SIL2308 series of dual MOSFET arrays from Micro Commercial Components. It serves as a discrete solution for replacing separate N-channel and P-channel transistors, reducing board space and simplifying bill-of-materials in consumer and industrial electronic assemblies requiring low-voltage switching.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic cross-references may differ in pinout orientation or thermal characteristics.
