ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 3A SOT23-6L
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：30mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 10V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6L
- Grade：-
- Qualification：-
Download product information
Overview
The SIL2322A-TP is a dual N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes high-density cell design to achieve extremely low on-resistance. The device features a Drain-Source Voltage of 20V and a continuous drain current of 1.9A at 25°C, with a pulsed drain current capability of 12A. The typical RDS(on) is 20mΩ at VGS=4.5V and 30mΩ at VGS=2.5V. Total power dissipation is rated at 1.2W, supported by a thermal resistance of 106°C/W junction-to-ambient. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-density cell architecture designed for minimal on-resistance
- Moisture Sensitivity Level 1 classification
- Halogen-free green device compliant with UL 94 V-0 flammability rating
Applications
- Low voltage power switching circuits
- DC-DC converter output stages
- Load switching applications
Procurement Notes
Verify the authenticity of the SIL2322A-TP through authorized MCC distributors or direct procurement from Micro Commercial Components Corp. Counterfeit components pose significant risks; ensure traceability and adherence to handling standards. Confirm RoHS compliance via the 'P' suffix designation and validate packaging specifications against the official datasheet before integration into production lines.
Selection Notes
Select this component for designs requiring a compact dual N-channel configuration in SOT23-6L packages. Evaluate the 20V breakdown voltage and 1.9A continuous current limits against circuit requirements. Consider the 106°C/W thermal resistance for heat dissipation planning in still air environments. Ensure gate drive voltages align with the specified threshold characteristics for optimal performance.
Part Context
This part belongs to the SIL2322A series of dual N-channel MOSFETs produced by Micro Commercial Components. It is packaged in an SOT23-6L footprint, providing a space-efficient solution for dual-channel applications. The product line emphasizes low on-resistance and environmental compliance, catering to modern electronics manufacturing standards.
Replacement Considerations
Consult official MCC documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without compromising circuit integrity.
FAQ
What is the maximum operating junction temperature for the SIL2322A?
The maximum operating junction temperature is +150°C.
Does the SIL2322A meet halogen-free requirements?
Yes, it is defined as a halogen-free green device containing less than 900ppm bromine and chlorine combined.
What is the typical reverse recovery time for the internal body diode?
The typical reverse recovery time is 9.7 ns.
