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The SIL2429HE3-TP is a dual N and P-channel MOSFET manufactured by Micro Commercial Components (MCC). It features a SOT23-6L package with a Drain-Source Voltage of ±20V. The N-Channel provides a Continuous Drain Current of 2.0A and a Pulsed Drain Current of 8.0A, while the P-Channel offers -1.6A continuous and -6.4A pulsed current. Total Power Dissipation is rated at 670mW. The device operates within a junction temperature range of -55°C to +150°C.
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Select this component for low-voltage switching applications requiring compact packaging. Evaluate thermal resistance constraints based on ambient temperature conditions. Consider gate threshold voltage compatibility with control logic levels to ensure reliable turn-on and turn-off performance in the target circuit design.
This part belongs to the SIL2429 series of dual MOSFETs from Micro Commercial Components. It integrates both N-channel and P-channel devices into a single small outline package, optimizing board space for portable electronics and industrial control modules requiring bidirectional or complementary switching capabilities.
Check pinout compatibility and electrical ratings against existing designs. Verify package dimensions match the footprint. Ensure thermal characteristics align with system requirements when substituting.