SIPC06N60C3

Single FETs, MOSFETs Overview

The SIPC06N60C3 is a sawed wafer component from Infineon Technologies, belonging to the CoolMOS C3 series. It is an N-channel power MOSFET designed for high-voltage applications with a drain-source voltage rating of 600 V. The device utilizes silicon technology and features a single channel configuration in an enhancement mode. Key electrical parameters include a continuous drain current of 6.2 A at 25°C, a maximum on-resistance of 750 mΩ at 10 V gate drive, and a gate charge of 31 nC. It operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS C3 technology for optimized performance in high-voltage switching applications.
• Features an N-channel enhancement mode structure for efficient control.
• Designed as a sawed wafer component for integration into custom substrates or modules.

Single FETs, MOSFETs Applications

• High-frequency switched-mode power supplies (SMPS)
• Industrial motor drives
• Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify that the specific procurement lot corresponds to the sawed wafer format rather than a standard packaged discrete component. Confirm compatibility with the intended substrate mounting process, as this item lacks a traditional plastic package. Ensure design reviews account for the exposed die characteristics and thermal management requirements specific to bare die implementations.

Single FETs, MOSFETs Selection Notes

Select this component when a bare die solution is required for space-constrained or high-power density designs. Compare the 750 mΩ on-resistance and 600 V rating against other CoolMOS variants to ensure adequate margin for the target application's voltage and current stresses. Evaluate the thermal interface material compatibility for direct die attachment.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS C3 family, which represents a generation of superjunction MOSFETs optimized for efficiency. Unlike standard TO-220 or D2PAK packages, the SIPC06N60C3 is provided as a sawed wafer, allowing manufacturers to integrate the semiconductor directly onto ceramic or metal-core printed circuit boards for improved thermal performance and reduced parasitic inductance.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements are not applicable due to the sawed wafer form factor. Equivalent functionality can be found in other CoolMOS C3 sawed wafers with similar Rds(on) and Vds ratings, such as those from the SPA or SPB series if packaged equivalents are acceptable for redesign.