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SIR500DP-T1-UE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 30 V (D-S) MOSFET 150. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIR500DP-T1-UE3
- Description：N-CHANNEL 30 V (D-S) MOSFET 150
- Series：TrenchFET® Gen V
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：85.9A (Ta), 350.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.47mOhm @20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：8960 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：6.25W (Ta), 104.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SIR500DP-T1-UE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SIR500DP-T1-UE3 is a single N-channel Power MOSFET utilizing TrenchFET Gen V technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum on-state resistance of 470 µΩ at VGS = 10 V and 680 µΩ at VGS = 4.5 V, with a typical gate charge of 54.3 nC. Packaged in a leadless PowerPAK SO-8 format, it supports continuous drain currents up to 350.8 A at TC = 25 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen V power MOSFET architecture
- Very low RDS(on) x Qg figure-of-merit
- Thermally enhanced compact package design
- 100% Rg and UIS tested
Single FETs, MOSFETs Applications
- DC/DC converter
- POL (Point of Load)
- Synchronous rectification
- Battery management
- Power and load switch
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The UE3 suffix indicates Lead-free and halogen-free construction with BLR and IOL compliance. Confirm that the PowerPAK SO-8 package requirements align with your PCB layout specifications, particularly regarding the exposed copper tips on the lead terminals which require appropriate soldering considerations.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling and low conduction losses in a compact footprint. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(on) performance. Evaluate thermal management strategies carefully, as the device's high current capability relies heavily on effective heat dissipation through the case and board mounting.
Single FETs, MOSFETs Part Context
This part belongs to the SiR500DP series from Vishay Siliconix. It is designed for high-efficiency power switching applications where size and thermal performance are critical constraints. The PowerPAK SO-8 package offers improved thermal characteristics compared to traditional surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for direct replacements. Verify pinout compatibility, electrical ratings, and package dimensions when considering alternative components.
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