SIRC10DP-T1-GE3

$1.05

Description：MOSFET N-CH 30V 60A PPAK SO-8
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f3a5bb478344 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIRC10DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 60A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIRC10DP-T1-GE3

Description：MOSFET N-CH 30V 60A PPAK SO-8
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：1873 pF @ 15 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：43W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

Single FETs, MOSFETs Overview

The SIRC10DP-T1-GE3 is a single N-channel 30 V MOSFET with an integrated Schottky diode, utilizing TrenchFET Gen IV technology in a PowerPAK SO-8 package. It features a maximum on-resistance of 3.5 mΩ at VGS = 10 V and 5.2 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 60 A (TC = 25 °C) and offers a typical gate charge of 11.2 nC. Thermal resistance from junction to case is rated at 2.9 °C/W maximum.

Single FETs, MOSFETs Feature Summary

Integrates a monolithic Schottky diode for synchronous rectification applications
Utilizes TrenchFET Gen IV power MOSFET technology
Subject to 100% Rg and UIS testing

Single FETs, MOSFETs Applications

Synchronous buck converters
Synchronous rectification circuits
DC/DC conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix -T1-GE3 corresponds to the required tape-and-reel packaging configuration. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure the PowerPAK SO-8 leadless package soldering profile aligns with manufacturing capabilities, as manual rework is not recommended.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and fast switching are critical for efficiency. The integrated Schottky diode eliminates the need for external body-diode replacement, simplifying circuit design. Verify that the 30 V drain-source voltage rating accommodates system transients and that the thermal management strategy supports the specified power dissipation limits.

Single FETs, MOSFETs Part Context

This part belongs to the SiRC series of Vishay Siliconix MOSFETs, specifically designed for high-efficiency power conversion. It combines advanced TrenchFET technology with a monolithic Schottky diode to reduce conduction losses and improve switching performance in compact surface-mount packages.