SIS334DN-T1-GE3

Single FETs, MOSFETs Overview

The SiS334DN is a Vishay Siliconix N-Channel Power MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current capacity of 20 A at TC = 25 °C. The device exhibits a maximum on-state resistance of 0.0113 Ω at VGS = 10 V and 0.0146 Ω at VGS = 4.5 V. Key dynamic parameters include a typical total gate charge of 5.1 nC at VGS = 4.5 V and 11.7 nC at VGS = 10 V. Thermal performance is characterized by a junction-to-case thermal resistance of 2.5 °C/W.

Single FETs, MOSFETs Feature Summary

• TrenchFET Power MOSFET architecture providing low on-resistance and high switching efficiency
• Leadless PowerPAK 1212-8 package designed for minimal footprint and superior thermal dissipation
• Validated for 100% gate resistance and unclamped inductive switching (UIS) reliability

Single FETs, MOSFETs Applications

• Notebook power supply circuits
• Point-of-load synchronous buck converters
• High-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definitions. Confirm that the component is sourced as lead-free. Ensure procurement channels provide the original manufacturer datasheet Document Number 63371 for accurate electrical parameter validation prior to integration.

Single FETs, MOSFETs Selection Notes

Select this component for space-constrained designs requiring robust thermal management within a small footprint. The low gate charge supports efficient drive requirements. Verify that the application's operating temperature range remains within -55 °C to +150 °C and ensure adequate PCB copper area is allocated to maintain thermal resistance below the specified maximum junction-to-ambient limits.

Single FETs, MOSFETs Part Context

This single-channel N-Channel MOSFET belongs to the SiS series from Vishay Siliconix. It is engineered specifically for high-current density applications where board space is limited. The PowerPAK 1212-8 package offers significantly lower thermal impedance compared to standard SO-8 or TSSOP-8 packages, allowing higher current handling capabilities relative to its physical size.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for direct cross-references. No substitute part numbers are confirmed in the provided source material.