SIS4608DN-T1-GE3

$0.94

Description：N-CHANNEL 60 V (D-S) MOSFET POWE
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:706a5b0f2507 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIS4608DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 60 V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIS4608DN-T1-GE3

Description：N-CHANNEL 60 V (D-S) MOSFET POWE
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：12.4A (Ta), 35.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：11.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.3W (Ta), 27.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SIS4608DN-T1-GE3

SIS4608DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiS4608DN-T1-GE3 is a single N-channel 60 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source on-state resistance of 0.0118 Ω at VGS = 10 V and 0.0150 Ω at VGS = 7.5 V, with a typical total gate charge of 8.9 nC. The device supports a continuous drain current of 35.7 A at TC = 25 °C and operates within a junction temperature range of -55 to +150 °C. Packaged in a lead-free PowerPAK 1212-8 surface-mount configuration, it is optimized for low RDS(on) x Qg and RDS(on) x Qoss figures-of-merit.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Optimized for lowest RDS(on) x Qg figure-of-merit
Tuned for the lowest RDS(on) x Qoss figure-of-merit
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switch
DC/DC converter
Motor drive switch
Load switch

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number SiS4608DN-T1-GE3 against official Vishay documentation. Confirm compliance with RoHS and REACH standards as specified in the datasheet. Ensure that the PowerPAK 1212-8 package handling procedures are followed, noting that manual soldering with an iron is not recommended due to the leadless design.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and low conduction losses in compact designs. The low gate charge and optimized figures-of-merit make it suitable for high-frequency switching environments. Evaluate thermal management requirements based on the junction-to-case and junction-to-ambient thermal resistance ratings provided in the specifications.

Single FETs, MOSFETs Part Context

This component belongs to the SiS series of N-channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK 1212-8 package, which provides a compact footprint with enhanced thermal performance compared to traditional packages. The TrenchFET Gen IV technology represents an advancement in silicon carbide gate trench MOSFET design for improved switching characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume compatibility with other N-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.