SIS890DN-T1-GE3

Single FETs, MOSFETs Overview

The SiS890DN is a Vishay Siliconix N-Channel Power MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 30 A at 25 °C case temperature. The device offers a maximum on-state resistance of 0.0235 Ω at VGS = 10 V and 0.0315 Ω at VGS = 4.5 V. Key dynamic parameters include a total gate charge of 19.1 nC (typical) at VGS = 10 V and a forward transconductance of 25 S. Thermal performance includes a junction-to-case resistance of 1.9 °C/W typical.

Single FETs, MOSFETs Feature Summary

• TrenchFET Power MOSFET architecture providing low on-resistance and optimized switching characteristics.
• Capable of operation with 5 V gate drive levels for compatibility with standard logic interfaces.
• 100% tested for repetitive avalanche energy and gate resistance to ensure robustness under stress conditions.

Single FETs, MOSFETs Applications

• Telecom bricks
• Primary side switch
• Synchronous rectification
• Industrial applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance attributes such as lead-free and halogen-free status. Ensure that the PowerPAK 1212-8 package dimensions and thermal pad requirements align with the target PCB layout specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in space-constrained environments due to its compact footprint and superior thermal dissipation compared to standard SO-8 packages. Evaluate the gate drive voltage requirements, as the on-resistance varies significantly between 4.5 V and 10 V drive levels. Confirm that the 100 V breakdown voltage meets the system's peak transient voltage requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiS series of single N-channel MOSFETs. It utilizes the PowerPAK 1212-8 package, which provides a footprint comparable to TSOP-6 but with significantly improved thermal performance. The device is designed for general-purpose power switching applications where size and thermal management are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic parameter ranges without verifying absolute maximum ratings and thermal characteristics.

Single FETs, MOSFETs FAQ

Is the SiS890DN suitable for 5 V logic control?

Yes, the datasheet specifies that the device is capable of operating with 5 V gate drive, although the on-state resistance will be higher than at 10 V.

What is the maximum pulsed drain current?

The absolute maximum ratings specify a pulsed drain current (IDM) of 60 A with a pulse width of 300 µs.