SIS903DN-T1-GE3

$1.28

Description：MOSFET 2P-CH 20V 6A PPAK 1212
Series：TrenchFET® Gen III

SKU:a79b684b2890 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 6A PPAK 1212
Series：TrenchFET® Gen III
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Rds On (Max) @ Id, Vgs：20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2565pF @ 10V
Power - Max：2.6W (Ta), 23W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8 Dual
Supplier Device Package：PowerPAK® 1212-8 Dual
Grade：-
Qualification：-

Download product information

SIS903DN-T1-GE3

Overview

The SiS903DN is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen III technology. It features a PowerPAK 1212-8 package with dimensions of 3.3 mm x 3.3 mm. The device supports a drain-source voltage (VDS) of -20 V and offers low on-resistance values: 0.0201 Ω at VGS = -4.5 V, 0.0261 Ω at VGS = -2.5 V, and 0.0400 Ω at VGS = -1.8 V. Continuous drain current (ID) is rated at 6 A under steady-state conditions. Typical gate charge (Qg) is 15.9 nC at VGS = -2.5 V. Thermal resistance junction-to-case (RthJC) is typically 4.3 °C/W.

Feature Summary

TrenchFET Gen III p-channel power MOSFET architecture
PowerPAK 1212-8 thermally enhanced leadless package
100% Rg and UIS tested for reliability

Applications

Load switch
Battery protection
Adapter and charger switch
Hand-held and mobile devices

Procurement Notes

Verify the specific ordering suffix to confirm package type and compliance status. The SiS903DN-T1-GE3 designation indicates a lead-free and halogen-free product in the PowerPAK 1212-8 package. Confirm that the component meets material categorization requirements by referencing the official Vishay documentation for definitions of compliance before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring compact dual P-channel switching with low on-resistance. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Verify thermal management capabilities against the junction-to-ambient and junction-to-case resistance ratings provided in the datasheet to maintain safe operating temperatures under expected load conditions.

Part Context

This dual MOSFET integrates two independent P-channel switches into a single compact footprint. The PowerPAK 1212-8 package provides a smaller surface area compared to traditional SO-8 packages while maintaining robust thermal dissipation characteristics. The integration simplifies PCB layout for space-constrained designs requiring multiple switching functions.