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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 11.3A PWRPAIR
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：11.3A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：720pF @ 20V
- Power - Max：2.6W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8
- Supplier Device Package：PowerPAK® 1212-8
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SIS9446DN-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 40 V drain-source voltage rating and a maximum on-resistance of 12 mΩ at VGS = 10 V, or 17 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 34 A at TC = 25 °C. Typical gate charge is 4.7 nC at VGS = 4.5 V. It is housed in a lead-free PowerPAK 1212-8 surface-mount package with an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Optimized gate charge parameters for reduced switching loss
- 100% tested for gate resistance and unclamped inductive switching
Applications
- Synchronous rectification
- Load switch applications
- Motor drive control
- Battery management systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the component matches the required package type and thermal characteristics for the intended application environment. Cross-reference datasheet revision dates to ensure accurate parameter data is utilized during design validation.
Selection Notes
Evaluate the on-resistance specifications at the target gate drive voltage to ensure adequate conduction performance. Consider the thermal resistance ratings when designing heat dissipation strategies. Verify that the gate charge requirements align with the driving circuit capabilities to optimize switching efficiency.
Part Context
This component belongs to the SiS series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK 1212-8 leadless package designed for high-density surface mount applications. The device integrates two independent channels within a single compact footprint.
Replacement Considerations
Consult official Vishay documentation for confirmed substitute part numbers. Do not assume compatibility based solely on electrical parameters without verifying pinout and package dimensions.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage rating is +20 V and -16 V.
Is the device suitable for unclamped inductive switching applications?
Yes, the datasheet specifies that the device undergoes 100% UIS testing.
What is the typical forward transconductance?
The typical forward transconductance (gfs) is 40 S at VDS = 10 V and ID = 20 A.
