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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 60A PWRPAK1212
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Rds On (Max) @ Id, Vgs：5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2700pF @ 15V
- Power - Max：69.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8SCD Dual
- Supplier Device Package：PowerPAK® 1212-8SCD Dual
- Grade：-
- Qualification：-
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Overview
The SiSF00DN is a common-drain dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAK 1212-8SCD package with an integrated low source-to-source on-resistance of 5 mΩ at VGS = 10 V and 7 mΩ at VGS = 4.5 V. The device supports a drain-source voltage (VS1S2) of 30 V and a continuous drain current (IS1S2) of up to 60 A under specific thermal conditions. Key electrical parameters include a gate charge of 16.1 nC typ., a threshold voltage range of 1 V to 2.1 V, and a maximum power dissipation of 69.4 W at TC = 25 °C.
Feature Summary
- Integrated common-drain configuration optimizes circuit layout for bi-directional current flow
- Very low source-to-source on-resistance reduces conduction losses
- TrenchFET Gen IV technology ensures high performance and reliability
Applications
- Battery management systems
- Load switching applications
Procurement Notes
Verify the component against the official datasheet document number 75573 to ensure authenticity. Confirm that the ordering suffix -T1-GE3 corresponds to lead-free and halogen-free packaging in the PowerPAK 1212-8SCD format. Cross-reference the manufacturer part number with authorized distributors to validate supply chain integrity before procurement.
Selection Notes
Select this component when bi-directional current handling and minimal source-to-source resistance are required within a 30 V system. Ensure the application can accommodate the 1212-8SCD footprint and that thermal management meets the junction-to-case requirements for the desired current load. Validate gate drive voltages against the specified threshold and on-resistance curves.
Part Context
This part belongs to the SiSF series of common-drain MOSFETs by Vishay Siliconix. It is designed specifically for applications requiring bidirectional current flow in a compact form factor. The PowerPAK 1212-8SCD package provides enhanced thermal performance compared to standard packages, supporting high current densities in space-constrained designs.
Replacement Considerations
No direct public substitute part numbers are documented in the provided source material. When evaluating alternatives, match the 30 V rating, dual N-channel common-drain configuration, and PowerPAK 1212-8SCD package dimensions. Verify that any replacement maintains comparable source-to-source on-resistance and thermal characteristics.
