ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 14A PWRPAK1212
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs：13mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1290pF @ 30V
- Power - Max：5.2W (Ta), 69.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8SCD Dual
- Supplier Device Package：PowerPAK® 1212-8SCD Dual
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SiSF20DN-T1-GE3 is a common-drain dual N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a PowerPAK 1212-8SCD package with an integrated common drain for optimized bi-directional current flow. The device supports a drain-source voltage of 60 V and delivers a continuous source current of 52 A at TC = 25 °C. On-state resistance (RS1S2(on)) is maximized at 0.0130 Ω at VGS = 10 V and 0.0185 Ω at VGS = 4.5 V. Total gate charge is typically 10.2 nC at VGS = 4.5 V, with a maximum junction temperature rating of +150 °C.
Feature Summary
- Integrated common-drain architecture enables efficient bi-directional current switching
- TrenchFET Gen IV technology provides very low source-to-source on-resistance
- Thermally enhanced leadless PowerPAK 1212-8SCD package optimizes circuit layout
Applications
- Battery protection switch
- Bi-directional switch
- Load switch
- 24 V systems
Procurement Notes
Verify the specific ordering suffix to ensure compliance with lead-free and halogen-free material requirements as documented in the datasheet. Confirm that the component matches the PowerPAK 1212-8SCD package dimensions and pinout configuration required by the target PCB land pattern. Validate thermal management strategies against the specified junction-to-case and junction-to-ambient thermal resistance ratings.
Selection Notes
Select this component when a compact solution for high-current bi-directional switching is required. The common-drain design simplifies layout compared to discrete dual configurations. Ensure the application gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Evaluate thermal dissipation capabilities based on the intended operating ambient temperature and board copper area.
Part Context
This part belongs to the Vishay Siliconix SiSF series of power MOSFETs. It utilizes the PowerPAK 1212-8SCD package, which is specifically designed for applications requiring low profile and high thermal efficiency. The common-drain configuration distinguishes it from standard single or dual MOSFETs by integrating the drains together.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation.
