SISS06DN-T1-GE3

$1.33

Description：MOSFET N-CH 30V 47.6/172.6A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b5f277a707e2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SISS06DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 47.6/172.6A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISS06DN-T1-GE3

Description：MOSFET N-CH 30V 47.6/172.6A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：47.6A (Ta), 172.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.38mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：77 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：3660 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 65.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8S
Package / Case：PowerPAK® 1212-8S

Single FETs, MOSFETs datasheet and documents for SISS06DN-T1-GE3

SISS06DN-T1-GE3

Single FETs, MOSFETs Overview

The SiSS06DN is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen IV technology. It features a 30 V drain-source voltage rating and a maximum on-resistance of 1.38 mΩ at VGS = 10 V. The device supports a continuous drain current of 172.6 A at TC = 25 °C and dissipates up to 65.7 W under the same conditions. Packaged in a compact PowerPAK 1212-8S, it offers optimized gate charge characteristics for efficient switching.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Very low RDS(on) in a thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching loss
100% Rg and UIS tested

Single FETs, MOSFETs Applications

Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number with official datasheets. Confirm compliance with RoHS and REACH standards as specified in the product documentation. Ensure that the ordering suffix matches the required lead-free and halogen-free specifications. Validate thermal management requirements against the absolute maximum ratings provided in the technical data.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a small footprint. Consider the specific gate drive voltage requirements, as on-resistance varies significantly between 4.5 V and 10 V. Evaluate thermal dissipation capabilities based on the intended case temperature and ambient conditions. Verify that the switching frequency aligns with the device's dynamic capacitance and gate charge parameters.

Single FETs, MOSFETs Part Context

This single-channel N-Channel MOSFET belongs to the SiSS series from Vishay Siliconix. It is designed for high-efficiency power conversion systems where space constraints are critical. The PowerPAK 1212-8S package provides excellent thermal performance relative to its physical size, making it suitable for dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Ensure any replacement maintains compatible voltage ratings, current capabilities, and package dimensions. Verify that thermal resistance and switching characteristics meet or exceed the original design requirements.