SISS61DN-T1-GE3

$1.11

Description：MOSFET P-CH 20V 30.9/111.9A PPAK
Series：TrenchFET® Gen III
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:068338b68a5b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SISS61DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 30.9/111.9A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISS61DN-T1-GE3

Description：MOSFET P-CH 20V 30.9/111.9A PPAK
Series：TrenchFET® Gen III
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：30.9A (Ta), 111.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：231 nC @ 10 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：8740 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：5W (Ta), 65.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8S
Package / Case：PowerPAK® 1212-8S

Single FETs, MOSFETs datasheet and documents for SISS61DN-T1-GE3

SISS61DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SISS61DN-T1-GE3 is a single P-channel MOSFET utilizing TrenchFET Gen III technology. It features a -20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device is housed in a compact PowerPAK 1212-8S surface-mount package. Key electrical parameters include a maximum on-state resistance of 0.0035 Ω at VGS = -4.5 V, a typical total gate charge of 86 nC, and a continuous drain current capability of -111.9 A at TC = 25 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen III p-channel power MOSFET architecture
Leadership RDS(on) performance in a thermally enhanced package
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Battery management systems
Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance attributes such as lead-free and halogen-free status. Ensure that the PowerPAK 1212-8S package dimensions align with the target PCB footprint. Confirm thermal management requirements based on the specified junction-to-case resistance values for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance in a minimal footprint. Evaluate the gate charge specifications against driver capabilities to ensure adequate switching speeds. Consider the thermal derating curves when determining continuous current limits under varying case temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiSS series of power MOSFETs. It utilizes the PowerPAK 1212-8S leadless package designed for high thermal efficiency. The device incorporates TrenchFET technology to optimize conduction losses while maintaining robust switching characteristics suitable for modern power management circuits.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinout configurations and absolute maximum ratings before integrating any substitute components into existing designs.