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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 17.2A 8PWRPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
- Rds On (Max) @ Id, Vgs：8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V, 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1180pF @ 20V, 1070pF @ 20V
- Power - Max：4.3W (Ta), 33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The SiZ240DT is a dual N-channel 40 V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It integrates two channels in a PowerPAIR 3 x 3S surface-mount package. Channel-1 offers a maximum RDS(on) of 8.05 mΩ at VGS = 10 V and a continuous drain current of 48 A at TC = 25 °C. Channel-2 provides a maximum RDS(on) of 8.41 mΩ at VGS = 10 V and a continuous drain current of 47 A at TC = 25 °C. The device features optimized gate charge characteristics for improved switching performance.
Feature Summary
- Integrated half-bridge power stage combining two N-channel MOSFETs
- TrenchFET Gen IV architecture with optimized Qgs/Qgd ratio
- Leadless PowerPAIR 3 x 3S package design
Applications
- Synchronous buck converter
- Telecom DC/DC conversion
- Point-of-load (POL) regulation
- Motor drive control
Procurement Notes
Verify the component against official datasheet specifications to ensure authenticity. Confirm that the ordering suffix matches the lead-free and halogen-free requirement. Validate the package type and pin configuration before integration into the circuit design.
Selection Notes
Select this component for applications requiring a compact dual N-channel solution with low on-resistance. Ensure the operating junction temperature remains within the -55 °C to +150 °C range. Verify thermal management requirements based on the specified junction-to-case thermal resistance values.
Part Context
This part belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3S leadless package, which is designed for high-density surface mount applications. The device is part of the TrenchFET family, known for its optimized switching characteristics.
Replacement Considerations
Check for direct replacements within the SiZ series or other dual N-channel MOSFETs with compatible voltage and current ratings. Ensure the replacement package matches the PowerPAIR 3 x 3S dimensions and pinout for board compatibility.
FAQ
What is the maximum gate-source voltage for the SiZ240DT?
The maximum gate-source voltage is +20 V and -16 V.
Is the SiZ240DT suitable for single-pulse avalanche energy applications?
Yes, the device supports a single pulse avalanche energy of 11 mJ with an inductance of 0.1 mH.
What is the typical total gate charge for Channel-1 at VGS = 10 V?
The typical total gate charge for Channel-1 is 15.2 nC when tested at VDS = 20 V, VGS = 10 V, and ID = 10 A.
