SIZ250DT-T1-GE3

$1.49

Description：MOSFET 2N-CH 60V 14A 8POWERPAIR
Series：TrenchFET® Gen IV

SKU:95479bb1574f Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 14A 8POWERPAIR
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs：12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：840pF @ 30V, 790pF @ 30V
Power - Max：4.3W (Ta), 33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-PowerPair® (3.3x3.3)
Grade：-
Qualification：-

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SIZ250DT-T1-GE3

Overview

The SiZ250DT is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 3 x 3S leadless package with dimensions of 3.3 mm by 3.3 mm. The device provides a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 38 A at TC = 25 °C. Maximum on-state resistance (RDS(on)) is 12.2 mΩ at VGS = 10 V for Channel-1 and 12.7 mΩ for Channel-2. Typical gate charge (Qg) is 6.2 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

TrenchFET Gen IV power MOSFET architecture
Optimized Qgs/Qgd ratio for improved switching characteristics
100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Leadless PowerPAIR 3 x 3S surface mount package

Applications

CPU core power
Computer and server peripherals
Point-of-load (POL) converters
Synchronous buck converters
Telecom DC/DC converters

Procurement Notes

Verify the component against official Vishay datasheet document number 77227. Confirm that the ordering suffix matches SIZ250DT-T1-GE3 to ensure compliance with lead-free and halogen-free material requirements. Validate package markings and pin configurations against the PowerPAIR 3 x 3S outline specifications before integration.

Selection Notes

Select this component for applications requiring low RDS(on) within a compact footprint. Ensure thermal management accounts for the junction-to-ambient resistance of approximately 29 °C/W. Verify that the gate drive voltage meets the minimum threshold for optimal conduction performance. Consider the symmetric dual-channel configuration for balanced load handling.

Part Context

This part belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR family of leadless packages designed for high-density surface mounting. The device integrates two independent N-channel MOSFETs within a single 8-terminal assembly.