SIZ254DT-T1-GE3

Overview

The SIZ254DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a PowerPAIR 3x3S leadless package with dimensions of 3.3 mm by 3.3 mm. The device provides a drain-source voltage (VDS) of 70 V and a continuous drain current (ID) of 32.5 A at TC = 25 °C. Maximum on-state resistance (RDS(on)) is 16.1 mΩ at VGS = 10 V and 20.9 mΩ at VGS = 4.5 V. Total gate charge (Qg) is typically 13 nC at VGS = 10 V. Thermal resistance junction-to-case (RthJC) is 33.8 °C/W. Operating temperature range spans -55 °C to +150 °C.

Feature Summary

• Integrated half bridge power stage configuration
• Optimized Qgs/Qgd ratio for improved switching characteristics
• 100% tested for gate resistance and single pulse avalanche capability

Applications

• Point-of-load (POL) converters
• Synchronous buck converter circuits
• Telecom DC/DC conversion systems
• Resonant converter topologies
• Motor drive control applications

Procurement Notes

Verify the component against official Vishay datasheet document number 79592 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free compliance standards. Validate that the PowerPAIR 3x3S package orientation aligns with the intended PCB land pattern design requirements.

Selection Notes

Select this component when a compact dual N-channel solution is required for high-current synchronous rectification. The low RDS(on) supports efficient power conversion in POL and telecom applications. Verify thermal management capabilities against the specified junction-to-case resistance for the target operating environment.

Part Context

This part belongs to the SiZ series of Vishay Siliconix power MOSFETs. It utilizes the TrenchFET Gen IV process technology to achieve low on-resistance within a small footprint. The PowerPAIR package offers enhanced thermal performance compared to traditional surface mount packages.

Replacement Considerations

Direct replacement requires matching the 70 V rating, dual N-channel configuration, and PowerPAIR 3x3S package outline. Verify pinout compatibility and ensure thermal resistance values meet system dissipation requirements.

FAQ

What is the maximum junction-to-case thermal resistance?

The maximum steady-state junction-to-case thermal resistance (RthJC) is 33.8 °C/W.

Is the device suitable for single pulse avalanche operation?

Yes, the datasheet confirms 100% UIS testing with a single pulse avalanche energy (EAS) rating of 7.2 mJ.

What is the typical total gate charge at VGS = 4.5 V?

The typical total gate charge (Qg) is 6.1 nC when tested at VDS = 35 V, VGS = 4.5 V, and ID = 10 A.