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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 7.1A 8PWRPAIR
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
- Rds On (Max) @ Id, Vgs：37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：860pF @ 50V, 845pF @ 50V
- Power - Max：4.3W (Ta), 33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PowerPair® (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The SiZ270DT-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features a 100 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device integrates two channels in a leadless PowerPAIR 3 x 3S package (3.3 mm x 3.3 mm). Maximum on-state resistance is 37.7 mΩ at VGS = 10 V for Channel 1 and 39.4 mΩ for Channel 2. Continuous drain current reaches 19.5 A at TC = 25 °C. Total gate charge is typically 6.1 nC at VGS = 4.5 V. The component includes integrated half-bridge power stage functionality with optimized Qgs/Qgd ratios.
Feature Summary
- TrenchFET Gen IV power MOSFET architecture
- Integrated MOSFET half bridge power stage
- Optimized Qgs/Qgd ratio for improved switching characteristics
- 100% Rg and UIS tested
Applications
- POL (Point-of-Load) converters
- Synchronous buck converter
- Telecom DC/DC conversion
- Resonant converters
- Motor drive control
Procurement Notes
Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance before procurement. Confirm the PowerPAIR 3 x 3S package dimensions match the PCB land pattern requirements. Ensure thermal management strategies account for the specified junction-to-ambient and junction-to-case thermal resistances under steady-state conditions.
Selection Notes
Select this component for applications requiring high-density integration due to its compact leadless PowerPAIR 3 x 3S footprint. Evaluate the low total gate charge and optimized switching parameters for high-frequency operation. Verify that the 100 V breakdown voltage aligns with system voltage requirements and transient spikes.
Part Context
The SiZ270DT belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR surface-mount package designed for efficient thermal dissipation and minimal board space consumption. This specific model represents the TrenchFET Gen IV generation, focusing on reduced on-resistance and enhanced switching performance.
Replacement Considerations
Consult official Vishay documentation for verified direct replacements. Cross-referencing requires matching the 100 V rating, dual N-channel configuration, and PowerPAIR 3 x 3S package constraints.
