SIZ320DT-T1-GE3

Overview

The SiZ320DT-T1-GE3 is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It features an asymmetric configuration within a single PowerPAIR 3 x 3 package. Channel 1 provides a maximum drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 30 A at TC = 25 °C, with a maximum on-resistance (RDS(on)) of 8.3 mΩ at VGS = 10 V. Channel 2 offers a higher current capacity of 40 A at TC = 25 °C and a lower RDS(on) of 4.24 mΩ under the same conditions. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Asymmetric dual-channel architecture providing distinct electrical characteristics for independent load management
• TrenchFET Gen IV structure optimized for low on-state resistance and high switching efficiency
• Leadless PowerPAIR 3 x 3 surface-mount package designed for minimal thermal impedance

Applications

• CPU core power regulation circuits
• Point-of-load (POL) DC/DC converters
• Synchronous buck converter topologies
• Telecommunications DC/DC power supplies

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay Siliconix documentation. Confirm that the ordering suffix matches the lead-free and halogen-free specification. Ensure the received components align with the PowerPAIR 3 x 3 physical dimensions and pinout defined in the datasheet before integration into production assemblies.

Selection Notes

Select this component when designing asymmetric dual-channel power stages requiring different current handling capabilities within a compact footprint. Evaluate the specific thermal requirements for each channel, as Channel 2 supports significantly higher continuous current than Channel 1. Consider the gate charge specifications to ensure compatibility with the intended driver circuitry for optimal switching performance.

Part Context

This component belongs to the SiZ series of Vishay Siliconix power MOSFETs, which are engineered for high-density power conversion applications. The SiZ320DT specifically utilizes the PowerPAIR package family, known for its low profile and superior thermal dissipation compared to traditional leaded packages. It represents a specialized solution for applications demanding multiple power channels in a restricted board area.

Replacement Considerations

Direct replacements must match the 25 V rating, dual N-channel configuration, and PowerPAIR 3 x 3 footprint. Verify that alternative devices meet or exceed the required RDS(on) and ID specifications for both channels. Ensure the replacement maintains compatible gate threshold voltages and thermal resistance characteristics.