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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 15.7A 8PWR33
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
- Rds On (Max) @ Id, Vgs：9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.2nC @ 10V, 27.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：580pF @ 15V, 1290pF @ 15V
- Power - Max：3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-Power33 (3x3)
- Grade：-
- Qualification：-
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Overview
The SiZ340ADT is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology. It integrates two channels within a leadless PowerPAIR 3 x 3 package. Channel-1 features a maximum drain-source voltage of 30 V and a continuous drain current of 33.4 A at TC = 25 °C, with a maximum on-resistance of 9.4 mΩ at VGS = 10 V. Channel-2 provides a higher current capacity of 69.7 A under the same conditions, with a maximum on-resistance of 4.29 mΩ. The device operates across a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Integrates two N-channel MOSFETs into a single PowerPAIR half-bridge power stage.
- Employs TrenchFET Gen IV technology for optimized switching performance.
- Features an optimized gate-drain to gate-source charge ratio to improve switching characteristics.
Applications
- CPU core power regulation
- Computer and server peripheral power management
- Point-of-load (POL) conversion
- Synchronous buck converter circuits
- Telecommunications DC/DC converters
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure the received components are compatible with the intended surface mount application and thermal management design.
Selection Notes
Select this component when a compact dual-channel solution is required for synchronous rectification or half-bridge topologies. Evaluate the specific current demands of each channel, as Channel-2 offers significantly higher current handling than Channel-1. Consider the low on-resistance values for efficiency optimization in high-current applications.
Part Context
This component belongs to the SiZ series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAIR 3 x 3 leadless package, which is designed for high-power density applications requiring efficient thermal dissipation through the exposed copper pad.
Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package dimensions or generic electrical ratings without verifying specific parameter compatibility.
